|Dimensions||150 × 150 × 10 cm|
MZ-75E500B / #10578
Samsung 500GB 850 EVO 2.5-Inch SATA III Internal SSD | MZ-75E500B/EU
Unlock Your Computer’s Potential
Samsung’s 850 EVO series SSD is the industry’s #1 best-selling* SSD and is perfect for everyday computing. Powered by Samsung’s V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabooks, the 850 EVO comes in a wide range of capacities and form factors.
*Based on 2015 NPD reported revenue in the US
The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode to further boost performance for up to 2x faster** data processing speeds by utilizing unused PC memory as cache storage.
**Compared to same drive w/out RAPID enabled
Guaranteed Endurance and reliability
The Samsung 850 EVO maintains high performance, optimized endurance, AES 256-bit hardware-based encryption***.
*** AES 256-bit hardware-based encryption is compliant with advanced security management solutions, such as IEEE 1667 and TCG Opal.
Capacities Range up to 4TB
More storage options that are just right for your needs. Samsung offers the 850 EVO in a full range of capacities up to 4TB. With the industry’s first 4TB SSD for client PCs, you can store more data on a single SSD than ever before.
Multiple Form Factors for Almost Any Need
Samsung has designed the 850 EVO in multiple form factors with compatibility in mind. The 2.5-inch size is designed to fit most desktop PCs and laptops, while the SATA-based M.2 and mSATA are ideal for ultra-slim mobile computing.
Solid State Drive
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
500 GB* Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Sequential Read Speed
Up to 540 MB/s Sequential Read * Performance may vary based on system hardware & configuration
Sequential Write Speed
Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration
Random Read Speed
Random Read (4KB, QD32):Up to 98,000 IOPS Random Read * Performance may vary based on system hardware & configuration Random Read (4KB, QD1):Up to 10,000 IOPS Random Read* Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32):Up to 90,000 IOPS Random Write* Performance may vary based on system hardware & configurationRandom Write (4KB, QD1):Up to 40,000 IOPS Random Write* Performance may vary based on system hardware & configuration
Samsung 32 layer 3D V-NANDSamsung 512 MB Low Power DDR3 SDRAM
Samsung MGX Controller
AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)
Power Consumption (W)
50 MW * Actual power consumption may vary depending on system hardware & configuration*Average: 3.0 W *Maximum: 3.5 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
5V±5% Allowable voltage
2 Million Hours Reliability (MTBF)
32ºF – 158ºF
2.5″ SATA III ”
Dimensions (W x D x H)
3.94″ x 2.75″ x 0.27″
10 in stock